k豆钱包

CN EN
Home
About Us
Newpros
New N150V SGT MOSFETs
New N150V SGT MOSFETs Back
PDF

011-9

Introduction Power over Ethernet Protocol (PoE) has been available for many years. A new standard IEEE 802.3bt was approved in 2018, which increases the maximum power that can be transmitted through twisted-pair Ethernet cables and encourages new PoE applications to pursue higher power density.Current power supply equipment (PSE) provides up to 100W of power and supports 8 different power levels;Power Device (PD) will be able to use up to 71W of power.Yangjie launched N150V serialized products for IEEE802.3af&at&bt.Using SGT technology, it has higher switching speeds and lower losses than traditional Trench MOS products.
Features 1、Using SGT technology, the product has low internal resistance and excellent switching characteristics
2、PDFN5060, SO-8, TO252, ITO220AB multiple packages are optional
3、Applicable to IEEE802.3af&at&bt protocol PD power supply
SPECIFICATION

YJD18G15A YJG15G15A YJG60G15HJ YJS05G15A

Related new products

6

High Temperature Resistant Schottky Diode

80A/1200V IGBT Discrete for Automotive PTC

  New N150V SGT MOSFETs | Yangjie Electronic Technology

Low Power SCR&TRIAC for Leakage Protection

111

High current patch rectifier bridge

011-9

New N150V SGT MOSFETs

IGBT 50A 1200V Discrete for Industrial Control

N30V Trench MOSFET for PD VBUS

TOLT-Packaged Power MOSFET for Clean Energy

011-4

100V TOLL Package MOSFET

Small Signal Schottky and Switching Diode in DFN0603 Package
【网站地图】