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IGBT Micro Trench Discrete for PV/Eenergy Storage/ EV Charger Application
IGBT Micro Trench Discrete for PV/Eenergy Storage/ EV Charger Application Back
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Introduction 1、TO-247package 50A 650V IGBT discrete ；
2、The voltage level is 650V, the current level is 50A@Tc=100℃ ；
3、It is mainly used for PV/Eenergy Storage/ EV charger and other high-frequency applications ；
4、Low conduction loss, low switching loss, high reliability ；
5、Use environmentally friendly materials and meet RoHS standards ；
Features 1、Tjmax=175℃;
2、Positive temperature coefficient  ；
3、High voltage 650V ；
4、Low conduction loss, low switching loss, meet the high frequency application conditions ；
5、The latest generation of micro trench design, a cost-effective product ；
SPECIFICATION

DGW50N65CTL0

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IGBT Micro Trench Discrete for PV/Eenergy Storage/ EV Charger Application | Yangjie Electronic Technology

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IGBT Micro Trench Discrete for PV/Eenergy Storage/ EV Charger Application

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